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CNY17 SERIES
TRIOS" PHOTOTRANSISTOR OPTOCOUPLER
FEATURES * High Current Transfer Ratio CNY17-1, 40 to 80% CNY17-2, 63 to 125% CNY17-3, 100 to 200% CNY17-4, 160 to 320% * Breakdown Voltage, 5300 VACRMS * Field-Effect Stable by TRIOS* * Long Term Stability * Industry Standard Dual-in-Line Package * Underwriters Lab File #E52744 V * VDE #0884, Available with Option 1
DE
Dimensions in inches (mm) Pin One ID 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Base 5 Collector 4 Emitter
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81)
DESCRIPTION The CNY17 is an optically coupled pair consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. Maximum Ratings (TA=25C) Emitter Reverse Voltage .................................................6 V Forward Current............................................ 60 mA Surge Current (t10s)................................... 2.5 A Power Dissipation.......................................100 mW Detector Collector-Emitter Breakdown Voltage ...............70 V Emitter-Base Breakdown Voltage .......................7 V Collector Current .......................................... 50 mA Collector Current (t <1 ms)......................... 100 mA Power Dissipation.......................................150 mW Package Isolation Test Voltage (Between emitter & detector referred to climate DIN 40046, part 2, Nov. 74) ..............................5300 VACRMS Creepage Distance .......................................... 7 mm Clearance Distance ......................................... 7 mm Isolation Thickness between Emitter and Detector................................. 0.4 mm Comparative Tracking Index per DIN IEC 112/ VDE0303, part 1.............................................175 Isolation Resistance VIO=500 V, TA=25C................................... 1012 VIO=500 V, TA=100C ................................ 1011 Storage Temperature ................... -55C to +150C Operating Temperature ............... -55C to +100C Junction Temperature ....................................100C Soldering Temperature (max . 10 s, dip soldering: distance to seating plane 1.5 mm) ..........260C
Characteristics (TA=25C)
Symbol Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Thermal Resistance Detector Capacitance CCE CCB CEB Rthjamb 5.2 6.5 7.5 500 pF pF pF K/W VCE =5 V, f =1 MHz VCB =5 V, f =1 MHz VEB =5 V, f =1 MHz Rthjamb VF VBR IR 1.25 (1.65) 6 0.01 (10) 25 750 V V A pF K/W IF = 60 mA IR = 10 mA VR = 6 V VR = 0 V, f =1 MHz Unit Condition
Thermal Resistance Package Collector-Emitter Saturation Voltage Coupling Capacitance
VCEsat CC
0.25 (0.4) 0.6
V pF
IF =10 mA, IC=2.5 mA
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Current Transfer Ratio and Collector-Emitter Leakage Current by dash number (TA=25C)
-1 IC/IF at VCE=5 V (IF=10 mA) IC/IF at VCE=5 V (IF=1 mA) Collector-Emitter Leakage Current (VCE=10 V) (ICEO) 40-80 -2 63125 45 (>22) 2 ( 50) -3 100200 70 (>34) 5 ( 100) -4 160320 90 (>56) 5 ( 100) Unit %
Figure 3. Current transfer ratio versus diode current (TA=-25C, VCE=5 V) IC/IF=f (IF)
30 (>13) 2 ( 50)
%
nA
Figure 1. Linear Operation (without saturation)
IF RL=75 IC VCC=5 V
47
Figure 4. Current transfer ratio versus diode current (TA=0C, VCE=5 V) IC/IF=f (IF)
s s s s kHz
IF=10 mA, VCC=5 V, TA=25 C
Load Resistance Turn-On Time Rise Time Turn-Off Time Fall Time Cut-off Frequency RL tON tR tOFF tf fCO 75 3.0 2.0 2.3 2.0 250
Figure 2. Switching Operation (with saturation)
IF 1 K VCC=5 V
47
Figure 5. Current transfer ratio versus diode current (TA=25C, VCE=5 V) IC/IF=f (IF)
-1 (IF=20 mA) Turn-On Time Rise Time Turn-Off Time Fall Time tON tR tOFF tF 3.0 2.0 18 11
-2 and -3 (IF=10 mA) 4.2 3.0 23 14
-4 (IF=5 mA) 6.0 4.6 25 15 s s s s
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Figure 6. Current transfer ratio versus diode current (TA=50C) VCE=5 V, IC/IF=f (IF)
Figure 9. Transistor characteristics (B=550) CNY17-3, -4 IC=f(VCE) (TA=25C, IF=0)
Figure 12. Collector emitter off-state current ICEO=f (V, T) (TA=25C, IF=0)
Figure 7. Current transfer ratio versus diode current (TA=75C) VCE=5 V
Figure 10. Output characteristics CNY17-3, -4 (TA=25C) IC=f(VCE)
Figure 13. Saturation voltage versus collector current and modulation depth CNY17-1 VCEsat=f (IC) (TA=25C)
Figure 8. Current transfer ratio versus temperature (IF=10 mA, VCE=5 V) IC/IF=f (T)
Figure 11. Forward voltage VF=f (IF)
Figure 14. Saturation voltage versus collector current and modulation depth CNY17-2 VCEsat=f (IC) (TA=25C )
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Figure 15. Saturation voltage versus collector current and modulation depth CNY17-3 VCEsat=f (IC) (TA=25C)
Figure 17. Permissible pulse load D=parameter, TA=25C, IF=f (tp)
Figure 19. Permissible forward current Ptot=f (TA)
Figure 16. Saturation voltage versus collector current and modulation depth CNY17-4 VCEsat=f (IC) (TA=25C)
Figure 18. Permissible power dissipation transistor and diode Ptot=f (TA)
Figure 20. Transistor capacitance C=f(VO) (TA=25C, f=1 MHz)
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